savantic semiconductor product specification silicon pnp power transistors 2SA1146 d escription with to-3p(i) package high power dissipations applications for audio and general purpose amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -140 v v ceo collector- emitter voltage open base -140 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -2 a p t total power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1146 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ,i b =0 -140 v v (br)ebo emitter-base breakdown voltage i e =-1ma ,i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-140v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-4a ; v ce =-5v 35 f t transition frequency i c =-0.5a ; v ce =-10v 70 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1146 package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm) downloaded from: http:///
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